Modeling self-heating effects in nanoscale SOI devices

Self-Heating Effects in SOI Devices and GaN HEMTs

DC self-heating effects modelling in SOI and bulk FinFETs

DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for t...

Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

Self-heating phenomena are studied from room down to near liquid helium temperatures in fully depleted N channel thin film SIMOX MOS devices. A simple theoretical analysis of the self-heating effect is worked out. A method for the extraction of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. Also direct self heating transient me...

Quantum Effects in SOI Devices

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. Typical method to simulate these effec...

Nanotube MEMS: Modeling extreme nanoscale devices

The physics of operation of nanotube NEMS devices is reviewed. Special attention is paid to non-classical effects, rarely described in MEMS analysis, such as van der Waals/Casimir interactions, quantum effects in electrostatics, atomistic parameterization of elasticity. As an example of a breakdown of a classical MEMS theory, the NEMS scaling limitation is derived in a lump model taking into ac...